What Are The Performance Advantages Of Silicon Carbide?

The development of silicon carbide power semiconductors has improved the hard switching characteristics of power switching devices, which can withstand tens of thousands of volts and temperatures above 500. Its performance advantages are as follows:
(1) Wideband gap can greatly reduce the leakage current, thus reducing the loss of high-power devices;
(2) High breakdown field strength can improve the withstand voltage and current density of power devices, and reduce the overall size;
(3) With high thermal conductivity and high temperature resistance, it can help the device heat dissipation, reduce the volume of heat dissipation equipment, improve the integration, and increase the power density;
(4) Good radiation resistance. In theory, silicon carbide device is an ideal material to realize the combination of high voltage, high temperature, high frequency, high power and radiation resistance. They are mainly used in high-power applications, which can realize miniaturization and integration of modules and application systems, and improve power density and system efficiency.
The silicon carbide semiconductor power device manufacturing industry chain is divided into five parts: substrate, epitaxy, device, packaging and system application. The industry chain involves chip manufacturing, functional module design and other links. Compared with the traditional silicon-based application technology, the key steps in the production of silicon carbide semiconductor power devices are more challenging.
Substrate is the foundation of power device. Physical vapor transport is a common method for silicon carbide single crystal growth. However, the high defect density of SiC-SiO2 interface and low channel electron mobility lead to the decline of semiconductor performance and reliability, which cannot reflect the advantages of SiC materials.
With the development of technology, 4-inch and 6-inch wafers with almost zero microtubule density can be produced by using special gate oxidation process or groove structure, and the cost of 8-inch wafers is high. At present, the main products on the market are still 4-inch single crystal substrates. Among the earliest industrial-grade SiC diodes, SiCSBD has a high maturity. SBD adopts a composite structure of PN-junction Schottky barrier, which can eliminate the limitation of tunneling current, achieve a high blocking voltage, and give full play to the advantages of high critical breakdown electric field strength of SiC.
Silicon carbide power module is divided into hybrid silicon carbide module and full silicon carbide power module.
Compared with SiIGBT module with the same rated current, SiC hybrid power module can significantly increase the operating frequency and greatly reduce the switching loss.