Development history of silicon carbide

Silicon carbide is a kind of carbide accidentally discovered by American Acheson in the laboratory during the electrofusion diamond experiment in 1891. At that time, it was mistaken for a mixture of diamond, so it was named emery. In 1893, Acheson developed a method of industrial smelting silicon carbide, which is also known as Acheson furnace, which has been used to this day, using carbon materials as the furnace core, Electrify and heat the mixture of quartz SiO2 and carbon to generate silicon carbide.
Several events about silicon carbide
Silicon carbide was first discovered in meteorites in 1905.
In 1907, the first silicon carbide crystal light emitting diode was born.
In 1955, with a major breakthrough in theory and technology, LELY put forward the concept of growing high-quality carbonization, and since then SiC has been regarded as an important electronic material.
In 1958, the first World Silicon Carbide Conference was held in Boston for academic exchange.
Silicon carbide was mainly studied by the former Soviet Union in the 1960s and 1970s. By 1978, the "LELY improved technology" grain purification growth method was first adopted.
From 1987 to now, CREE's research achievements have been used to establish silicon carbide production lines, and suppliers have begun to provide commercialized silicon carbide bases.